Electronic properties of grains and grain boundaries in graphene grown by chemical vapor deposition
نویسندگان
چکیده
We synthesize hexagonal shaped single-crystal graphene, with edges parallel to the zig-zag orientations, by ambient pressure CVD on polycrystalline Cu foils. We measure the electronic properties of such grains as well as of individual graphene grain boundaries, formed when two grains merged during the growth. The grain boundaries are visualized using Raman mapping of the D band intensity, and we show that individual boundaries between coalesced grains impede electrical transport in graphene and induce prominent weak localization, indicative of intervalley scattering in graphene. * Corresponding author. Tel.: +1 765 494 0947; Fax: +1 765 494 0706 E-mail address: [email protected] (Y. P. Chen)
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